Polishing hard pads are core consumables in the chemical mechanical polishing 

(CMP) process. They remove surface materials from wafers and achieve nanoscale 

flatness through the combined effect of mechanical friction and chemical corrosion.

The third-generation semiconductor 

polishing pad

The third-generation semiconductor polishing pad is a core consumable in the 

chemical mechanical polishing (CMP) process. Through the synergistic effect of 

chemical etching and mechanical grinding, it removes the surface material of the 

wafer and achieves nanoscale flatness. Due to the high hardness of SiC and GaN 

(with a Mohs hardness of 9.5 for SiC), traditional polishing pads are difficult to meet the requirements. Therefore, special materials and structural designs are adopted to balance hardness and flexibility and reduce surface defects.